ScienceJohn Michels (Journalist) 1957 |
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Стр. 108
... germanium atoms . This material ( H.B.V. ) is of the sort which was used to make germanium diodes which withstand a high voltage in the reverse direction ( High Back Voltage ) and also used in the first tran- sistors . The purest ...
... germanium atoms . This material ( H.B.V. ) is of the sort which was used to make germanium diodes which withstand a high voltage in the reverse direction ( High Back Voltage ) and also used in the first tran- sistors . The purest ...
Стр. 152
... germanium , it has a char- acteristic length of about 1 x 10 - 1 centi- meter . This is our model of a surface , a ... Germanium Surface in a Gaseous Ambient Let us now consider a germanium sur- face in a gaseous ambient . By the Kelvin ...
... germanium , it has a char- acteristic length of about 1 x 10 - 1 centi- meter . This is our model of a surface , a ... Germanium Surface in a Gaseous Ambient Let us now consider a germanium sur- face in a gaseous ambient . By the Kelvin ...
Стр. 1353
... germanium ( 10-12 sec ) . Although the Hall effect ( Edmund Hall , of Harvard University ) dates back to 1879 , the ... germanium junction transistor , which utilizes the difference in energy gap be- tween silicon and germanium to obtain ...
... germanium ( 10-12 sec ) . Although the Hall effect ( Edmund Hall , of Harvard University ) dates back to 1879 , the ... germanium junction transistor , which utilizes the difference in energy gap be- tween silicon and germanium to obtain ...
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Chlorpromazine and reserpine prevention | 7 |
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