ScienceJohn Michels (Journalist) 1957 |
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Стр. 110
... layer . The surface resistance is near a maximum . At the right , the bands bend down so , as to form an accumulation layer of excess electron conductance near the surface . The charge on the surface proper is now positive , and is ...
... layer . The surface resistance is near a maximum . At the right , the bands bend down so , as to form an accumulation layer of excess electron conductance near the surface . The charge on the surface proper is now positive , and is ...
Стр. 111
... layer of opposite conductiv- ity type near the surface . Earlier work of Ohl and Scaff had indicated that one could get an inversion layer of n - type conductivity on p - type silicon by suitably oxidizing the surface . If a point ...
... layer of opposite conductiv- ity type near the surface . Earlier work of Ohl and Scaff had indicated that one could get an inversion layer of n - type conductivity on p - type silicon by suitably oxidizing the surface . If a point ...
Стр. 152
... layer at the boundary be- tween the two regions . The charge den- sity p is related to the potential by Pois- son's equation d2V dx2 = - - 4πρ / ε ( 4 ) where is the dielectric constant of the medium . The extent of this space - charge ...
... layer at the boundary be- tween the two regions . The charge den- sity p is related to the potential by Pois- son's equation d2V dx2 = - - 4πρ / ε ( 4 ) where is the dielectric constant of the medium . The extent of this space - charge ...
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Chlorpromazine and reserpine prevention | 7 |
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