Science, Том 323,Выпуски 5917-5922American Association for the Advancement of Science, 2009 |
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Стр. 1002
... materials . But although negatively charged electrons move quickly in most III - V materials , positively charged " holes " typically do not . a OF E st ai ts 16 11 to cha. the world's smallest FinFET transistors with high - k ...
... materials . But although negatively charged electrons move quickly in most III - V materials , positively charged " holes " typically do not . a OF E st ai ts 16 11 to cha. the world's smallest FinFET transistors with high - k ...
Стр. 1019
... materials together by hand to develop new device structures . Today , it is possible to sandwich oxide materials together with atomic - scale precision , leading to the observation of novel interfacial phenomena at the single - nanome ...
... materials together by hand to develop new device structures . Today , it is possible to sandwich oxide materials together with atomic - scale precision , leading to the observation of novel interfacial phenomena at the single - nanome ...
Стр. 1123
... Materials , Interfaces , and Reliability Implications Materials , Processes , and Reliability for Advanced Interconnects for Micro- and Nano - Electronics Science and Technology of Chemical Mechanical Planarization ( CMP ) Packaging ...
... Materials , Interfaces , and Reliability Implications Materials , Processes , and Reliability for Advanced Interconnects for Micro- and Nano - Electronics Science and Technology of Chemical Mechanical Planarization ( CMP ) Packaging ...
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